MOSCAD Design and Automation announces the release of a very low power 3.3V to 1.2V Linear Voltage regulator. The cell is implemented in 0.13µm CMOS technology and is currently available for UMC technology. The maximum internal current, including the built-in bandgap, is less than 1.8µA. This makes the cell ideally suited for low power and battery operated applications.

MOSCAD is announcing the first silicon oscillator using its ground breaking NXO technology. The High Precision Oscillators is available as a semiconductor IP module for ASIC, SoC or Full Custom IC applications and permits replacing expensive quartz or ceramic resonator based solutions. The fully integrated silicon oscillator has a precision that is better than 1000ppm over full temperature range (-20°C to 95°C).

MOSCAD Design and Automation announces the release of a set of I/O cells fully compatible with the Low-Voltage Differential Signaling (LVDS) standard. The cells are implemented in 0.13µm CMOS technology and are currently available for TowerJazz semiconductor. The cells can operate at a transmission rate of up to 500MS/s and exhibit a power consumption of 0.65mW and 10.9mW for the receiver and transmitter, respectively.

MOSCAD Design & Automation announces the release of a new, fully silicon proven, 13-Bit, 2.56MS/s Successive Approximation ADC. The ADC is manufactured in a standard 0.18µm CMOS process (no MiM, no double poly). The converter shows excellent dynamic performance and a very low power consumption (< than 5mW).

MOSCAD Design & Automation introduces a new bandgap circuit for process UMC 0.5µm. This cell BG1V25U05 shows an excellent power supply rejection ratio of 80dB and consumes less than 50µA.

MOSCAD Design & Automation introduces a new temperature detector cell TDVA1P0S for SMIC 0.18µm low-leakage process.

MOSCAD Design & Automation launches its new web site design.