MOSCAD Design and Automation announces the release of a set of I/O cells fully compatible with the Low-Voltage Differential Signaling (LVDS) standard. The cells are implemented in 0.13µm CMOS technology and are currently available for TowerJazz semiconductor. The cells can operate at a transmission rate of up to 500MS/s and exhibit a power consumption of 0.65mW and 10.9mW for the receiver and transmitter, respectively.

MOSCAD Design & Automation announces the release of a new, fully silicon proven, 13-Bit, 2.56MS/s Successive Approximation ADC. The ADC is manufactured in a standard 0.18µm CMOS process (no MiM, no double poly). The converter shows excellent dynamic performance and a very low power consumption (< than 5mW).

MOSCAD Design & Automation introduces a new bandgap circuit for process UMC 0.5µm. This cell BG1V25U05 shows an excellent power supply rejection ratio of 80dB and consumes less than 50µA.

MOSCAD Design & Automation introduces a new temperature detector cell TDVA1P0S for SMIC 0.18µm low-leakage process.

MOSCAD Design & Automation launches its new web site design.